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| BAT 63-099R Silicon Schottky Diodes * Zero bias diode array for mixer and detectors up to GHz frequencies * Crossover ring quad Type Marking Ordering Code Q62702-A1105 Pin Configuration 1=A 2=C Package SOT-143 BAT 63-099RSN Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, BAT17W Junction temperature Operating temperature range Storage temperature Symbol Values 40 40 Unit V mA mW 150 - 55 ... + 150 C VR IF TA 97C Ptot Tj Top Tstg Total power dissipation, BAT17-04...06W TS 92C Ptot Thermal Resistance Junction - ambient, BAT17W Junction - ambient, BAT17-04W...06W Junction - soldering poin, BAT17W Junction - soldering point, BAT17-04W...06W RthJA RthJA RthJS RthJS K/W Semiconductor Group 1 Feb-01-1996 BAT 63-099R Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC characteristics Breakdown voltage Values typ. max. Unit V(BR) IR 0.85 0.35 10 V A V 1 pF 0.6 OHM I(BR) = 100 A Reverse current VR = 40 V, TA = 25 C Forward voltage VF CT RF IF = 2 mA Diode capacitance VR = 0 , f = 1 MHz Differential forward resistance IF = 5 mA, f = 100 MHz Semiconductor Group 2 Feb-01-1996 BAT 63-099R Forward current IF = f (VF) Diode capacitance CT = f (VR) f = 1MHz 10 2 mA 0.5 IF 10 1 TA = 25C TA = 85C TA = 125C 10 0 CT pF 0.3 0.2 10 -1 0.1 10 -2 0.0 0.0 0.2 0.4 0.6 V 1.0 0 5 10 15 20 V 30 VF VR Leakage current IR = f (VR) TA = Parameter 10 3 uA IR 10 2 TA = 125C TA = 85C 10 1 10 0 TA = 25C 10 -1 0 5 10 15 20 25 30 V VR 40 Semiconductor Group 3 Feb-01-1996 BAT 63-099R Package Semiconductor Group 4 Feb-01-1996 |
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